| 摘要 |
Thin film transistor (TFT) array substrate comprises gate lines (101) and data lines (102) crossing each other to define pixel regions on substrate; TFTs adjacent to each crossing point of one of gate lines and one of data lines, and each having gate electrode (101a) protruded from gate line, source electrode (102a) protruded from data line, and drain electrode (102b) adjacent the source electrode; pixel electrodes (103) on pixel regions, being adjacent the drain electrode; and transparent electrode patterns located adjacent one of data lines, where source electrodes protrude from data line. The TFTs further comprise a semiconductor layer and a gate insulating layer. The substrate further comprises a passivation layer, common lines on the pixel regions, common electrode, gate pad pattern (121), and gate pad terminal (123). An independent claim is included for a method for manufacturing a TFT array substrate. |
