| 发明名称 |
Semiconductor device and electric power conversion apparatus therewith |
| 摘要 |
<p>In the IGBT having at least a p+n-pn+ structure from the collector to the emitter, the n layer with higher density than the n- layer is formed between the n- layer and the p layer. The n layer is a barrier for holes, and as the holes are stored in the n- layer, ON voltage is reduced.</p> |
| 申请公布号 |
EP1895595(A2) |
申请公布日期 |
2008.03.05 |
| 申请号 |
EP20070021535 |
申请日期 |
1997.10.17 |
| 申请人 |
HITACHI, LTD. |
发明人 |
MORI, MUTSUHIRO;UCHINO, YOSHIHIRO |
| 分类号 |
H01L29/66;H01L29/06;H01L29/08;H01L29/10;H01L29/423;H01L29/739 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
