| 摘要 |
A plasma processing apparatus is provided to improve yield by preventing a foreign substance from being inputted to inside the processing chamber from a vacuum pump. A plasma processing apparatus includes a processing chamber(113), a vacuum pump(114), an inducing unit, and a gas flux adjustor. A processing gas is provided to the processing chamber. Plasma is generated inside the processing chamber. A sample is mounted on an upper plane of a sample bar. The vacuum pump reduces a pressure by discharging a gas inside the processing chamber from a lower side of the sample. A pressurizing unit has a fixed wing and a rotation wing having a plurality of wings arranged on a coaxial line. The vacuum pump has a discharge unit which discharges the gas discharged from the pressurizing unit to outside the case. The inducing unit includes an inert gas by arranging between a rotation wing, which is arranged on an upper location of the pressurizing unit, and the fixed wing which is arranged under the rotation wing. The gas flux adjustor is arranged between a gas bottom flow unit of the inert gas and the inducing unit, and adjusts a quantity of the inert gas. |
