FLASH MEMORY DEVICE AND MULTI LEVEL CELL PROGRAM METHOD FOR THE SAME

摘要

A flash memory device and a multi level cell program method for the same are provided to shorten program time as minimizing the generation of overshoot. According to a multi level cell program method of a flash memory device comprising a plurality of memory cells programmed as one of a plurality of data states, selected memory cells are programmed as a first data state(S1000). Verification for the program is performed(S1100). The selected memory cells are programmed continuously as at least more than two data states having a lower threshold voltage than the first data state(S1200). Verification of the continuous program is performed(S1300).