摘要 |
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO<SUB>2</SUB>, or In<SUB>2</SUB>O<SUB>3</SUB>. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO<SUB>2 </SUB>or In<SUB>2</SUB>O<SUB>3</SUB>, the substantially insulating ZnO, SnO<SUB>2</SUB>, or In<SUB>2</SUB>O<SUB>3 </SUB>being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
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