发明名称 Analysis apparatus for semiconductor LSI circuit electrostatic discharge by calculating inter-pad voltage between pads
摘要 A semiconductor integrated circuit electrostatic discharge analysis apparatus includes a resistance network generation unit generating a resistance network served as a power supply interconnect equivalent circuit in a logic cell region of a semiconductor LSI circuit based on pitch, width and a sheet resistance of a power supply interconnect; a protection network generation unit generating an electrostatic discharge protection network with pads and protection elements placed in an I/O cell region of the changing semiconductor LSI circuit, connected to the resistance network; and an analysis unit calculating an inter-pad voltage between the pads when electrostatic discharge equivalent current flows between the pads.
申请公布号 US7340699(B2) 申请公布日期 2008.03.04
申请号 US20040890025 申请日期 2004.07.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAYASHI SACHIO
分类号 G06F17/50;H01L21/82;H01L23/62;H01L27/02;H03F1/26;H03F1/30 主分类号 G06F17/50
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