Connection, configuration, and production of a buried semiconductor layer

摘要

A power transistor has a semiconductor volume including a plurality of transistor cells connected in parallel, a laterally oriented, highly conductive semiconductor layer buried below the transistor cells in the semiconductor volume, and at least one connection, via which the buried semiconductor layer can be contact-connected from the top side of the power transistor. At least one connection is formed within a trench extending from the top side of the power transistor towards the buried semiconductor layer.