发明名称 |
Methods and circuits for programming addresses of failed memory cells in a memory device |
摘要 |
A method of programming addresses of failed memory locations in a memory device can be provided by generating a plurality of fail address signals corresponding to a plurality of addresses of failed memory locations in the memory device and then programming the plurality of addresses of failed memory locations to programming cells for use by a redundant circuit during read or write operations to the plurality of addresses of failed memory locations.
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申请公布号 |
US7339843(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20050229918 |
申请日期 |
2005.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN YOUNG-SUN;KIM NAM-JONG;CHOI JONG-HYUN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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