发明名称 |
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure |
摘要 |
Methods of fabricating a single transistor floating body dynamic random access memory (DRAM) cell include forming a barrier layer on a semiconductor substrate. A body layer is formed on the barrier layer. An isolation layer is formed defining a floating body region within the body layer. A recess region is formed in the floating body region. A gate electrode is formed in the recess region. Impurity ions of a first conductivity type are implanted into a portion of the floating body region on a first side of the recess region to define a source region and into a portion of the floating body on an opposite side of the recess region to define a drain region to provide a floating body.
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申请公布号 |
US7338862(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20060335333 |
申请日期 |
2006.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUO ZONG-LIANG;BAIK SEUNG-JAE;YEO IN-SEOK;YOON HONG-SIK;KIM SHI-EUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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