| 摘要 |
A method of fabricating a semiconductor device includes forming a metal wire on a substrate, forming an interlayer insulating film on the metal wire, forming a resist pattern on the interlayer insulating film, selectively etching the interlayer film to form a trench or via-hole in the interlayer insulating film and reaching the metal wire, and ashing, using a reducing gas, to remove the resist pattern.
|
