发明名称 Hall sensor
摘要 A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A space-charge zone in the semiconductor substrate separates the first zone and the second zone, first contacts supply a control current to the first zone, and second contacts supply a compensation current to the second zone.
申请公布号 US7339245(B2) 申请公布日期 2008.03.04
申请号 US20050526137 申请日期 2005.11.02
申请人 AUSTRIAMICROSYSTEMS AG 发明人 MUELLER THOMAS
分类号 H01L27/14;G01R33/07;H01L23/552;H01L29/34;H01L29/82;H01L29/84 主分类号 H01L27/14
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