发明名称 Aluminum nitride substrate and production method
摘要 An aluminum nitride substrate comprises a planar sintered aluminum nitride body containing carbon including free carbon and a substantially planar electrode buried in the sintered aluminum nitride body. The sintered aluminum nitride body includes a work mounting portion for placing a work thereon and a base layer having the electrode buried therein. The average concentration of free carbon in the work mounting portion different from the average concentration of free carbon in the base layer.
申请公布号 US7338723(B2) 申请公布日期 2008.03.04
申请号 US20050081093 申请日期 2005.03.15
申请人 NGK INSULATORS, LTD. 发明人 HATTORI AKIYOSHI
分类号 C04B35/581;B32B9/00;H01L21/68;H01L21/683;H01L23/15 主分类号 C04B35/581
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