SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DEVICE FOR MANUFACTURING SEMICONDUCTOR THIN FILM

摘要

A semiconductor thin film, a thin film transistor, a manufacturing method thereof, and a device for manufacturing a semiconductor thin film are provided to reduce an initial error rate by reducing a surface roughness of a polycrystalline semiconductor thin film. A polycrystalline semiconductor thin film(5) is formed by applying a laser beam(12) onto an amorphous semiconductor thin film(4). Crystal grains(6) are arranged into a lattice shape. A size of each crystal grain is about 1/2 of an oscillation wavelength of the laser beam. An average roughness of a surface of the polycrystalline semiconductor thin film is 3 nm or less. The polycrystalline semiconductor thin film is formed with a polysilicon film. An arrangement direction of the crystal grains arranged in a lattice shape is vertical to a laser irradiation scan direction.