发明名称 |
Methods of fabricating semiconductor devices |
摘要 |
Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the gate electrode; implanting ions into source and drain regions and performing a hydrogen annealing process; and performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region.
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申请公布号 |
US7338870(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20040026714 |
申请日期 |
2004.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SHIN HYUN SOO |
分类号 |
H01L21/336;H01L21/762;H01L21/30;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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