| 摘要 |
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers 13 a to 13 c in a partial area of a semiconductor substrate 10 , a step of forming an interlayer insulating film 21 on the refractory metal silicide layers 13 a to 13 c, a step of forming a first conductive film 31 , a ferroelectric film 32 , and a second conductive film 33 in sequence on the interlayer insulating film 21 , a step of forming a capacitor Q consisting of a lower electrode 31 a, a capacitor dielectric film 32 a, and an upper electrode 33 a by patterning the first conductive film 33 , the ferroelectric film 32 , and the second conductive film 31 , and a step of performing an annealing for an annealing time to suppress a agglomeration area of the refractory metal silicide layers 13 a to 13 c within an upper limit area.
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