发明名称 |
BLEQ driving circuit in semiconductor memory device |
摘要 |
A bit line equalization signal (BLEQ) driving circuit for generating an equalization signal used to perform a precharge operation in a semiconductor memory device includes a second boosted voltage generator for producing a second boosted voltage by pumping a supply voltage, a BLEQ driver for generating the equalization signal by using the second boosted voltage in response to an equalization command and providing the equalization signal to a precharge unit, an equalizer and an I/O switch module. By using the second boosted voltage VPUP, which is lower than a first boosted voltage and higher than the supply voltage, as the equalization signal to be provided to gates of transistors for precharging a low power device to a precharge voltage level, it is possible to save current that a voltage pump consumes and satisfy a constant tRP.
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申请公布号 |
US7339847(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20070709745 |
申请日期 |
2007.02.23 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM KYOUNG-NAM;LEE KANG-SEOL |
分类号 |
G11C7/12;G11C7/00;G11C11/4094 |
主分类号 |
G11C7/12 |
代理机构 |
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