发明名称 Apparatus and method for high efficiency RF power amplification using drain bias adaptation
摘要 An RF transmitter having an RF power amplifier comprising: 1) a drive transistor that receives an input RF signal and generates an output RF signal; and 2) a drain bias adaptation circuit for supplying drain current to the drive transistor. The drain bias adaptation circuit comprises: i) a first switch for coupling the drive transistor drain to a system supply voltage; ii) a second switch for coupling the drive transistor drain to a high supply voltage that is greater than the system supply voltage; iii) a first bypass capacitor coupled to the first switch for reducing noise in the drain current when the first switch is closed and the second switch is open; and iv) a second bypass capacitor coupled to the second switch for reducing noise in the drain current when the second switch is closed and the first switch is open.
申请公布号 US7340228(B2) 申请公布日期 2008.03.04
申请号 US20050177032 申请日期 2005.07.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MONROE ROBERT W.;BROBSTON MICHAEL L.
分类号 H04B1/04 主分类号 H04B1/04
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