发明名称 |
Apparatus and method for high efficiency RF power amplification using drain bias adaptation |
摘要 |
An RF transmitter having an RF power amplifier comprising: 1) a drive transistor that receives an input RF signal and generates an output RF signal; and 2) a drain bias adaptation circuit for supplying drain current to the drive transistor. The drain bias adaptation circuit comprises: i) a first switch for coupling the drive transistor drain to a system supply voltage; ii) a second switch for coupling the drive transistor drain to a high supply voltage that is greater than the system supply voltage; iii) a first bypass capacitor coupled to the first switch for reducing noise in the drain current when the first switch is closed and the second switch is open; and iv) a second bypass capacitor coupled to the second switch for reducing noise in the drain current when the second switch is closed and the first switch is open.
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申请公布号 |
US7340228(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20050177032 |
申请日期 |
2005.07.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MONROE ROBERT W.;BROBSTON MICHAEL L. |
分类号 |
H04B1/04 |
主分类号 |
H04B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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