发明名称 |
Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation |
摘要 |
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of MRAM cells each column being provided in a respective stacked memory layer.
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申请公布号 |
US7339811(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20050142447 |
申请日期 |
2005.06.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
NEJAD HASAN;SEYYEDY MIRMAJID |
分类号 |
G11C5/06;G11C11/00;G11C11/16 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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