BULK HETEROJUNCTION POLYMER-FULLERENE PHOTOVOLTAIC DEVICES ON GALLIUM-DOPED ZINC OXIDE AND PREPARATION METHOD

摘要

A bulk heterojunction polymer-fullerene photovoltaic device using a gallium-doped zinc oxide and a method of manufacturing the same are provided to maintain efficiency by using a polymer material. A drain electrode(4) is formed on an upper end of a substrate(2) by using a gallium-doped zinc oxide. An active layer(6) is laminated on an upper end of the drain electrode. A buffer layer(8) is laminated on an upper end of the active layer. A source electrode(10) is laminated on an upper end of the buffer layer. The active layer is formed with a conjugated polymer. The conjugated polymer is P3HT/PCBM, P3AT/PCBM, P3OT/PCBM, MEH-PPV/PCBM, or MDMO-PPV/PCBM. The buffer layer is formed with PEDOT:PSS.