发明名称 Semiconductor device manufacture method
摘要 An electric conductive film is formed on the insulating surface of a substrate, the substrate having a trench formed on the insulating surface, and the conductive film being filled in the trench. Chemical mechanical polishing is executed to expose the insulating surface of the substrate and leave a portion of the conductive film in the trench. The surface of the substrate having the exposed conductive film in the trench and the exposed insulating surface is exposed to first liquid. After being exposed to the first liquid, the surface of the substrate is exposed to second liquid. The first liquid is either solution which contains at least one first substance selected from a first group consisting of benzotriazole, derivative of benzotriazole and interfacial active agent, or water. The second solution is solution which contains the first substance at a density higher than a density of the first liquid.
申请公布号 US7338905(B2) 申请公布日期 2008.03.04
申请号 US20040838218 申请日期 2004.05.05
申请人 FUJITSU LIMITED 发明人 SHIRASU TETSUYA;KARASAWA TOSHIYUKI;MISAWA NOBUHIRO;YAMAMOTO TAMOTSU;NAKANO KENJI
分类号 H01L21/302;H01L21/3205;H01L21/02;H01L21/304;H01L21/306;H01L21/3105;H01L21/321;H01L21/461;H01L21/76;H01L21/768 主分类号 H01L21/302
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