| 摘要 |
<p>A thin film transistor is provided to reduce a manufacturing cost by eliminating a mask process for laminating and patterning a metal layer. A source electrode(110A) and a drain electrode(110B) are disposed on a substrate(100) and include a conductive polymer resin. An insulating layer(120,140) is inserted between the source electrode and the drain electrode and is formed with an insulating polymer resin coupled commonly with an end of the conductive polymer resin. A semiconductor layer(130) is disposed on the source electrode, the drain electrode, and the insulating layer and includes a constant area corresponding to the source electrode and the drain electrode. A gate insulating layer is disposed on the semiconductor layer. A gate electrode(150) is disposed on the gate insulating layer.</p> |
