METHOD OF PHOTO PROCESS FOR IN-WAFER PATTERN UNIFORMITY IN SEMICONDUCTOR DEVICE FABRICATION

摘要

An exposing method for manufacturing a semiconductor device is provided to increase the uniformity of contact resistance and an operational margin of equipment by controlling a line width. Process transition characteristics in a wafer of etching equipment are recognized. The recognized process transition characteristics is reflected in each of chip exposing processes of an exposing equipment in association with the etching equipment to perform the chip exposing processes. When the recognized process transition characteristics of the etching equipment are reflected, a focal length is controlled within a focal length tolerance of the exposing equipment. An optical source output of the exposing equipment is controlled when the recognized process transition characteristics of the etching equipment is reflected.