发明名称 |
SEMICONDUCTOR DEVICE INCLUDING HIGH VOLTAGE GENERATION CIRCUIT AND METHOD THERE-OF |
摘要 |
A semiconductor device comprising a high voltage generation circuit and a method thereof are provided to prevent an operation error and overshoot of the semiconductor device, by comprising a switching part capable of connecting a first voltage generation circuit and a second voltage generation circuit. A first pump clock generation part(22) generates a first pump clock signal on the basis of a first power supply voltage. A first charge pump part(24) generates a first pump output voltage, in response to the first pump clock signal. A second pump clock generation part(32) generates a second pump clock signal on the basis of the first pump output voltage. A second charge pump part(34) generates a second pump output voltage in response to the second pump clock signal. A switching part(40) connects the first charge pump part and the second charge pump part selectively.
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申请公布号 |
KR100809072(B1) |
申请公布日期 |
2008.03.03 |
申请号 |
KR20060094799 |
申请日期 |
2006.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYEON, DAE SEOK;CHAE, DONG HYUK |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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