发明名称 SEMICONDUCTOR DEVICE INCLUDING HIGH VOLTAGE GENERATION CIRCUIT AND METHOD THERE-OF
摘要 A semiconductor device comprising a high voltage generation circuit and a method thereof are provided to prevent an operation error and overshoot of the semiconductor device, by comprising a switching part capable of connecting a first voltage generation circuit and a second voltage generation circuit. A first pump clock generation part(22) generates a first pump clock signal on the basis of a first power supply voltage. A first charge pump part(24) generates a first pump output voltage, in response to the first pump clock signal. A second pump clock generation part(32) generates a second pump clock signal on the basis of the first pump output voltage. A second charge pump part(34) generates a second pump output voltage in response to the second pump clock signal. A switching part(40) connects the first charge pump part and the second charge pump part selectively.
申请公布号 KR100809072(B1) 申请公布日期 2008.03.03
申请号 KR20060094799 申请日期 2006.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYEON, DAE SEOK;CHAE, DONG HYUK
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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