发明名称 |
SYSTEM AND METHOD FOR DAMPENING HIGH PRESSURE IMPACT ON POROUS MATERIALS |
摘要 |
<p>SYSTEM AND METHOD FOR DAMPENING HIGH PRESSURE IMPACT ON POROUS MATERIALS System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.</p> |
申请公布号 |
SG139528(A1) |
申请公布日期 |
2008.02.29 |
申请号 |
SG20040000352 |
申请日期 |
2004.01.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
WANG CHING-YA;CHUANG PING;LIN YU- LIANG;ZHOU MEI-SHENG;LO HENRY |
分类号 |
B08B7/00;H01L21/306;H01L21/311;(IPC1-7):C23G1/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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