METHOD FOR FABRICATING AN INTEGRATED CIRCUIT ON A SEMICONDUCTOR SUBSTRATE,申请号KR20060136848-传众专利搜索

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发明名称	METHOD FOR FABRICATING AN INTEGRATED CIRCUIT ON A SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	KR100809173(B1)	申请公布日期	2008.02.29
申请号	KR20060136848	申请日期	2006.12.28
申请人		发明人
分类号	H01L21/324	主分类号	H01L21/324
代理机构		代理人
主权项
地址

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