| 摘要 |
<p>An OPC(optical proximity correction) method is provided to improve OPC precision of every pattern including an intermediate dense pattern by using a data conversion process. Data including a CD(critical dimension) value of a pattern is detected(S101). The data is employed in a data conversion formula to perform a data conversion process(S102). The result of the data conversion process is modeled to perform an OPC process(S103,S104). The data conversion formula is (1)-[bias of (3)+·˜bias of (2)-bias of (3)·�/·˜(4)-(5)·�]x·˜(4) or (5)·�wherein (1) is an etch CD of an active region, (2) is a CD of an isolated pattern line among patterns formed after etching, (3) is a CD of a dense pattern line among patterns formed after etching, (4) is a pitch of an isolated pattern line, and (5) is a pitch of a dense pattern line.</p> |
