| 摘要 |
A power conversion apparatus and a malfunction detection method thereof are provided to prevent a failure of one IGBT(Insulated Gate Bipolar Transistor) device from influencing the damage of the other IGBT device, by detecting abnormality of a gate driving circuit and the IGBT device. A power conversion apparatus uses a plurality of voltage controlled semiconductor devices. A pulse generation part(200) generates a command pulse to control on/off of the voltage controlled semiconductor device, on the basis of a command from a control circuit. A gate driving part(400a) receives the command pulse, and controls on/off operation of the voltage controlled semiconductor device by applying a voltage according to the command pulse as a gate voltage, and outputs a gate feedback signal indicating the on/off state of the voltage controlled semiconductor device. A failure detection part(300) detects a failure, by receiving the command pulse and the gate feedback signal. The failure detection part includes a detection part and a signal generation part for generating a signal to stop the command pulse for the voltage controlled semiconductor device.
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