WET ETCHING SOLUTION HAVING HIGH SELECTIVITY FOR SILICON OXIDE

摘要

A wet etchant having the selectivity to a silicon oxide layer, and a method for etching a silicon oxide layer selectively by using the wet etchant are provided to increase the selectivity of a silicon oxide layer to a metal silicide by inhibiting the etching of a metal silicide layer and by increasing the etching of a silicon oxide layer. A wet etchant having the selectivity to a silicon oxide layer comprises 0.1-3 wt% of hydrofluoric acid; 10-40 wt% of at least one inorganic acid selected from nitric acid, sulfuric acid and hydrochloric acid; and the balance of water. Also, the wet etchant comprises 0.1-10 wt% of hydrofluoric acid; 60-98 wt% of an organic acid compound having at least one carboxyl group; and the balance of water. Also the wet etchant comprises 0.1-10 parts by weight of hydrofluoric acid; 0.1-10 parts by weight of ammonium hydrofluorate; 30-50 parts by weight of an organic acid compound having at least one carboxyl group; and 30-50 parts by weight of an alcohol; and the balance of water.