| 摘要 |
A semiconductor memory and a fabricating method thereof are provided to prevent reduction of a first buried insulation layer by using a second buried insulation layer as a protective layer when a natural oxide layer is removed. A semiconductor memory includes plural cell units arranged in a column direction. Each of the cell units has a semiconductor region, a first buried insulation layer(2) formed on the semiconductor region, a second buried insulation layer(3) formed on the first buried insulation layer and having a dielectric constant higher than the first buried insulation layer, a semiconductor layer(40) formed on the second buried insulation layer, and plural memory cell transistors arranged in a row direction. The memory cell transistor has a source region, a drain region and a channel region.
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