| 摘要 |
<p>Sensor comprising a detection element which outputs electrical signals, which sensor has superficial aluminium or aluminium-containing components, a first layer made of silicates being present on the surface of said components and a second layer, composed of n-octadecyltrichlorosilane, being applied to said first layer. Applicable to products such as gas sensors whose useful signals are very small, with the result that they are to be read out by means of field effect transistors. In these areas of signal processing, interference signals have to be precluded as far as possible. The product is a so-called GAsFET.</p> |
