| 摘要 |
A method for manufacturing a CMOS image sensor is provided to prevent a crack from occurring on a passivation insulation layer by performing a sinter process on the passivation insulation layer before the passivation insulation layer is etched. A first passivation insulation layer(250) is formed on a semiconductor substrate(220) having a metal pad(230) and plural metal lines(240). A sinter process is performed on the first passivation insulation layer under a hydrogen atmosphere. Then, a second passivation insulation layer(260) is formed on the first passivation insulation layer. An etching process is performed on the substrate by using a photoresist pattern of the second passivation insulation layer to expose an upper portion of the metal pad.
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