发明名称 |
Printed non-volatile memory and manufacturing method thereof |
摘要 |
<p>A nonvolatile memory cell is disclosed, having first (2) and second (3) semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island (2) providing a control gate and the second semiconductor island (3) providing source and drain terminals; a gate dielectric layer (4) on at least part of the first semiconductor island (2); a tunneling dielectric layer (5) on at least part of the second semiconductor island (3); a floating gate (7) on at least part of the gate dielectric layer (4) and the tunneling dielectric layer (5); and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an "all-printed" process technology.</p> |
申请公布号 |
EP1892753(A2) |
申请公布日期 |
2008.02.27 |
申请号 |
EP20070016503 |
申请日期 |
2007.08.22 |
申请人 |
KOVIO, INC. |
发明人 |
KAMATH, ARVIND;SMITH, PATRICK;CLEEVES, JAMES MONTAGUE |
分类号 |
H01L21/336;H01L21/208;H01L21/288;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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