| 摘要 |
A photomask for forming a gate and a method for manufacturing semiconductor devices using the same are provided to form large gate tap patterns at a boundary of an active region by using a photomask having a connection part between mask patterns. A photomask includes a photomask substrate(110), plural main gate forming mask patterns(120), gate tap forming mask patterns(123), and connection parts(125). The main gate forming mask patterns, which are formed on the photomask substrate, crosses over at least one active region formed on a semiconductor substrate and defines plural gate lines, which are arranged in parallel. The gate tap forming mask patterns are positioned at both sides of the main gate forming mask patterns. The connection parts, which are formed between gate tap forming mask patterns, include a cutoff region. |
