| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent refraction of light due to different refraction index between multiple insulation layers by shortening an optical path extending from a micro lens to a photodiode. A semiconductor substrate has a lower structure for processing optical information. Plural metallizations(214,215) are formed in a pixel region and a logic region of the substrate. First metallizations are connected to a first contact(204) in the logic region, and a silicon thin film is formed on the uppermost metallization of the metallizations in the pixel region. A second contact(219) penetrates the silicon thin film to be connected to the uppermost metallization. Plural photodiodes(218) are formed on the silicon thin film, and an upper insulation layer(220) is formed on the photodiode. Plural color filters(221) are formed on the uppermost insulation layer, and plural micro lenses(224) are formed on the uppermost insulation layer.
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