| 摘要 |
A method for manufacturing a CMOS image sensor is provided to prevent a surface of a metal pad from being exposed by forming a protection layer in a metal pad opening. A first insulation layer is formed on a silicon semiconductor substrate(100) having a metal pad(102), and then is selectively etched to form a first insulation layer pattern(104a) having a first opening. A metal pad protection layer is formed in the first opening, and then a second insulation layer is formed on the first insulation layer pattern. The second insulation layer is selectively etched to form a second insulation layer pattern(108a) having a second opening. A color filter array(114) is formed on the second insulation layer pattern, and a micro lens(116) is formed on the color filter array. The substrate is etched to remove the metal pad protection layer and thus open a metal pad opening(118).
|
