发明名称 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
摘要 |
Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1x10<SUP>20 </SUP>atoms/cm<SUP>3</SUP>.
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申请公布号 |
US7335266(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20050229224 |
申请日期 |
2005.09.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FU LI;PANAYIL SHEEBA J.;WANG SHULIN;QUENTIN CHRISTOPHER G.;LUO LEE;CHEN AIHUA;TAO XIANZHI |
分类号 |
C23C16/52;C23C16/00;C23C16/22;C23C16/24;G06F19/00;H01L21/205 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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