摘要 |
The invention includes methods of etching nickel suicide and cobalt suicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel suicide is exposed to a fluid comprising H3PO4 and H2O at a temperature of at least 50°C and at a pressure from 350 Torr to 1100 Torr effective to etch nickel suicide from the substrate. In one implementation, at least one of nickel suicide or cobalt suicide is exposed to a fluid comprising H2SO4, H2O2, H2O, and HF at a temperature of at least 50 °C and at a pressure from 350 Torr to 1100 Torr effective to etch the at least one of nickel suicide or cobalt suicide from the substrate.
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