| 摘要 |
A semiconductor memory device is provided to reduce current consumption and area by reducing chip size and area of a write driver while performing write operation and data mask operation smoothly. A data latching part(200) latches data applied to a global data line in response to a first control signal. A first and a second driving control signal generation part(210,220) generate a first and a second driving control signal according to an output signal of the data latching part in response to a second control signal. A first driving part(230) drives a positive local data line in response to the first and the second driving control signal. A second driving part(240) drives a negative local data line in response to the first and the second driving control signal. A control signal generation part(270) generates the first and the second control signal in response to write operation information and data mask operation information. The second control signal enables the first and the second driving control signal generation part during the write operation, and disables the first and the second driving control signal generation part during the data mask operation.
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