| 摘要 |
An apparatus for fabricating a semiconductor device is provided to shorten an interval of the entire process time by reducing four unit processes to two unit processes. A process for forming a pad oxide layer and a process for forming a pad nitride layer are sequentially performed in a first chamber(301). A process for forming a pad insulation layer is performed in a second chamber, and a heat treatment process is performed on the pad insulation layer(303). The first chamber can include a first gas pipe for supplying gas for forming the pad oxide layer and a second gas pipe for supplying gas for forming the pad nitride layer. After the pad oxide layer is formed, nitrogen gas can be introduced to remove oxygen gas in the first chamber and a pad nitride layer can be formed.
|
