Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same

摘要

A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.