| 摘要 |
A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple layer reflecting mirror, a second semiconductor multiple layer reflecting mirror formed on the active region, a current confining layer formed between the first and second multiple layer reflecting mirrors, the current confining layer including an oxidized region at a peripheral portion, a first electrode formed at a side of the first semiconductor multiple layer reflecting mirror, and a second electrode formed at a side of the second semiconductor multiple layer reflecting mirror, wherein the first electrode is electrically connected to the semiconductor layer of the first semiconductor multiple layer reflecting mirror.
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