发明名称 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
摘要 YAG laser can simultaneously emit a plurality of laser beams having different wavelengths from each other. By simultaneously irradiating the laser beams having different wavelengths from each other to a same region of a non-single crystal semiconductor film, an interference influence is suppressed to obtain a more uniform laser beam. For example, by simultaneously generating second and third harmonics of YAG laser to irradiate the same region through suitable optical system, a laser beam having higher uniformity and having an energy in which interference is highly suppressed is obtained.
申请公布号 US7336685(B2) 申请公布日期 2008.02.26
申请号 US20040756776 申请日期 2004.01.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO
分类号 H01S3/10;B23K26/00;B23K26/06;B23K26/067;B23K26/073;B23K26/08;B23K26/18;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01S3/13 主分类号 H01S3/10
代理机构 代理人
主权项
地址