TRILAYER RESIST ORGANIC LAYER ETCH

摘要

A triple layer resist organic layer etching is provided to prevent the damage of a porous low dielectric by using C2O gas to etch an OPL(Organic Planarization Layer). A via is formed on a porous low dielectric(104). An OPL for filling the via is formed on the porous low dielectric(108). A photoresist mask is formed on the OPL(120). To etch pitcher, CO2 etching gas is provided. Then, plasma is executed based on the CO2 etching gas for etching the OPL(126). A trench is etched on the porous low dielectric using the OPL as a mask(128). The OPL is stripped(132). Then, a dual damascene pitcher is formed on the porous low dielectric.