发明名称 |
Semiconductor device and method of making thereof |
摘要 |
To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.
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申请公布号 |
US7335950(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20040959981 |
申请日期 |
2004.10.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;TERAMOTO SATOSHI |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/77;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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