| 摘要 |
An apparatus for fabricating a semiconductor device is provided to improve process reliability and shorten an interval of process time by efficiently removing the byproducts formed on the inner wall of an exhaust line. Gas is exhausted from a process chamber(170) by an exhaust line(140). A remote plasma source(110) introduces plasma gas into the process chamber or the exhaust line to remove the byproducts formed on the inside of the exhaust line, commonly connected to the process chamber and the exhaust line. A first valve part can block the plasma gas introduced from the remote plasma source to the process chamber, connected between the exhaust line and the remote plasma source.
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