| 发明名称 |
Semiconductor apparatus with improved yield |
| 摘要 |
The semiconductor apparatus includes a pad; a first line layer placed immediately beneath the pad; and a lattice-shaped contact being between the pad and the first line layer.
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| 申请公布号 |
US7335992(B2) |
申请公布日期 |
2008.02.26 |
| 申请号 |
US20050090597 |
申请日期 |
2005.03.28 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
ANZAI KUNIO |
| 分类号 |
H01L21/66;H01L23/48;H01L21/3205;H01L21/82;H01L21/822;H01L23/485;H01L23/52;H01L23/528;H01L27/04;H01L27/10;H01L29/40;H01L29/73 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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