| 摘要 |
A method for forming a device isolation device of a semiconductor device is disclosed. The method includes the steps of forming a moat pattern for forming a trench on a semiconductor substrate, forming a trench by etching the semiconductor substrate to a predetermined thickness by using the moat pattern, forming a trench isolation layer by depositing a trench filling material on an entire surface of the substrate including the trench by using a high density plasma (HDP) process, partially masking a center region of the substrate and etching the trench isolation layer on edge regions of the substrate to a predetermined thickness, and planarizing the entire surface of the substrate having the trench isolation layer etched. By enhancing the thickness uniformity of the center region and the edge regions of the substrate (or wafer), when forming the trench isolation layer, by using the high density plasma (HDP) process, planarization of the trench isolation layer can be ensured even after the surface planarization process, which can minimize a difference in critical dimension depending upon the position of the center region and edge regions of the gate pattern, which is to be formed in a later process, thereby minimizing differences in device characteristics.
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