发明名称 |
Method for preventing the formation of a void in a bottom anti-reflective coating filling a via hole |
摘要 |
A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a bottom anti-reflective coating (BARC) in a via hole in an interlayer dielectric on a semiconductor substrate sufficiently to fill the via hole; disposing an acid diffusion material on the BARC; forming a cross-link layer between the BARC and the acid diffusion material; removing the remaining acid diffusion material; and etching the cross-link layer, the BARC and the interlayer dielectric to form a trench extending from an upper portion of the via hole.
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申请公布号 |
US7335585(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20040969550 |
申请日期 |
2004.10.20 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
CHOI YONG JUN |
分类号 |
G03F7/16;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
G03F7/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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