| 摘要 |
A semiconductor device and a fabricating method thereof are provided to reduce an implant photolithographic process by forming PMOS transistors and NMOS transistors on separate wafers and configuring the transistors in one package. A first chip(310) consists of only NMOS transistors, and a second chip(320) consists of only PMOS transistors. A third chip(330) has cell drive transistors for driving the NMOS transistors and the PMOS transistors. The first to third chips are connected to each other by a line. A third chip consists of cell driving NMOS transistors driving the NMOS transistors and the PMOS transistors, and a fourth chip consists of cell driving PMOS transistors.
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