发明名称 Semiconductor device having switch circuit to supply voltage
摘要 A memory cell array has memory cells arranged in a matrix form. The memory cell includes a floating gate and a control gate. Word lines are each coupled to the control gates of the memory cells which are arranged on a corresponding one of the rows in the memory cell array. Bit lines are each coupled to drains of the memory cells which are arranged on a corresponding one of the columns in the memory cell array. An external voltage is supplied from the exterior to an external voltage input terminal. A first voltage generating circuit lowers the external voltage to generate a voltage which is to be supplied to the word line coupled to the control gates. A second voltage generating circuit lowers the external voltage to generate a voltage which is to be supplied to the bit line coupled to the drains.
申请公布号 US7336545(B2) 申请公布日期 2008.02.26
申请号 US20050232999 申请日期 2005.09.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANZAWA TORU
分类号 G11C5/14;G11C7/12;G11C8/08;G11C16/12;G11C16/14;G11C16/30 主分类号 G11C5/14
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